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 Ordering number : ENA0665
LB11681H
Overview
Monolithic Digital IC
PWM Three-phase Brushless Motor Driver
The LB11681H is a three-phase brushless fan motor driver IC. This IC uses a PWM soft switching drive-method (for low-noise drive). Since this IC includes a motor constraint protection circuit necessary for a fan motor system, highly reliable products including this IC can be designed. Also, this IC can be operated with 12V single power supply.
Functions
* Direct PWM drive * Three-phase full-wave driving method * Soft switching driving * Built-in lock (constraint) protection circuit * Built-in lock (constraint) detection circuit * FG output (provides one Hall effect sensor equivalent FG outputs) * Built-in Forward / Reverse switching circuit * Built-in thermal shut down circuit * Built-in current limitation circuit
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Supply Voltage Output current Allowable Power dissipation 1 Allowable Power dissipation 2 Operating temperature Storage temperature Symbol VM max IO max Pd max1 Pd max2 Topr Tstg Independence IC Mounted on a circuit board* Conditions Ratings 15.0 1.3 0.8 2.0 -20 to 85 -55 to 150 Unit V A W W C C
* Mounted on a specified board: 114.3mmx76.1mmx1.6mm, glass epoxy.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
22807 MS IM B8-8366 No.A0665-1/11
LB11681H
Recommended Operating Ranges at Ta = 25C
Parameter Supply Voltage range FG pin output current LD pin output current Symbol VM VFG VLD Conditions Ratings 10 to 14 0 to 3.0 0 to 1.0 Unit V mA mA
Electrical Characteristics at Ta = 25C, VM = 12.0V
Parameter Current drain1 VR pin VR pin voltage Output block Saturated voltage Diode forward voltage PWM frequency Hall amplifier Common-mode input range Input off set voltage Input current Hall minimum input level Hysteresis Current control circuit VCTL input voltage range VREF input voltage range Driving gain Control start voltage Limiter voltage LCK pin Charge current Discharge current 1 Discharge current 2 Lock detection operation voltage Lock detection release voltage F/R pin High level input voltage range Low level input voltage range High level input current LD pin Low level voltage FG output pin Low level voltage Hall bias Minus- side pin voltage Thermal shut down circuit Thermal shut down operation temperature Temperature hysteresis TSD Design target* TSD Design target* 150 180 40 C C VHIH=5mA 1.1 1.5 1.8 V VFGL ILOAD=3mA 0.15 0.4 V VLDL ILOAD=1mA 0.15 0.4 V VFRH VFRL IFRH VFR=VR 2.5 0 120 VR 0.6 300 V V A IIC IDC1 IDC2 VLDON VLDOFF When the lock protection function is running When a Hall FG is input, VCLK=4 3.8 2.1 3.5 0.70VR 0.22VR 4.1 2.4 3.9 4.4 2.7 4.3 0.85VR 0.28VR A A mA V V VCTL VCREF GDF+L VDS VRf Linear region 1.5 to 2.0V 0 0 0.18 VREF 0.17 0.21 1.75 0.21 VR-1 3.5 0.24 VREF+40 0.25 V V V/V mV V VCM VHOF IHIN VHIN VHYS Differential input Sum of upper and lower hysteresis 1.0 -5 -3 50 6 15 35 4.0 5 3 V mV A mVp-p mVp-p VSAT VD fPWM SOURCE + SINK, IO=0.6A IO=0.6A OSC=220pF 60 1.4 1.2 75 2.1 1.6 90 V V kHz VR 5.0 V Symbol IM1 Conditions min VCTL=1.75V and VREF=1.75V Ratings typ (10.0) max mA Unit
*: Design target value and no measurement was made.
No.A0665-2/11
LB11681H
Package Dimensions
unit : mm (typ) 3233B
15.2 (6.2) 28 15
(4.9)
10.5
7.9
1 0.8 (0.8) 2.0 0.3
14 0.25
2.7
0.1
(2.25)
2.45max
SANYO : HSOP28H(375mil)
2.4
Allowable Power Dissipation, Pd max - W
Mounted on a specified board: 114.3mmx76.1mmx1.6mm, glass epoxy
2.0
1.6
1.2
0.65
Pd max - Ta
HEAT SPREADER
Independent IC
0.8
0.96
0.4
0.384
0 -20
0
20
40
60
80
100 ILB01808
Ambient Temperature, Ta -C
Pin Assignment
28 HU+
27 HU-
26 HV+
25 HV-
24 HW+
23 HW-
22 SGND
21 VCTL
20 VREF
19 LD
18 NC
17 LCK
16 NC 13 FG
15 F/R 14 Top view VR No.A0665-3/11
LB11681H
WOUT PGND UOUT VOUT PWM HBVM NC NC RF NC 12 IB 11
1
2
3
4
5
6
7
8
9
10
Block Diagram
FG VR
LD
LCK
LOCK DITECT TSD LEVEL SHIFT
VM
HU+
HU-
HV+
HV-
MATRIX & LOGIC
UOUT VOUT WOUT
LB11681H
HW+
HW-
HB-
HALL BIAS
RF
PGND Q R + SGND OSC S LIM
IB
No.A0665-4/11 F/R
PWM
VREF
VCTL
LB11681H
Truth Table
Source Sink 1 2 3 4 5 6 WOUTVOUT WOUTUOUT VOUTUOUT VOUTWOUT UOUTWOUT UOUTVOUT HU+ H H H L L L F/R "L" HV+ H L L L H H HW+ L L H H H L HU+ L L L H H H F/R "H" HV+ L H H H L L HW+ H H L L L H
Sample Application Circuit
VCTL VREF
LD
28 HU+
27 HU-
26 HV+
25 HV-
24 HW+
23 HW-
22 SGND
21 VCTL
20 VREF
19 LD
18 NC
17 LCK
16 NC 13 FG FG
15 F/R 14 No.A0665-5/11 VR
LB11681H
WOUT PGND UOUT VOUT PWM HBVM NC NC NC 12 RF IB 11
1
2
3
4
5
6
7
8
9
10
+
12V
LB11681H
Pin Functions
Pin No. 1 Symbol HBPin Description Hall bias minus-side bias pin. Minus-side bias pin of Hall element is connected with this pin. In addition, connect a bias resistance between Hall element plus-side bias and power supply. Equivalent Circuit
VR
3 4
VM RF
Power supply pin. Connect a capacitor between this pin and GND. Pin to detect the output current. The drive current is detected by connecting a low-resistance between this pin and GND.
VM
1k
1
7 8 9
UOUT VOUT WOUT
Output pin. The motor coils are connected with these pins.
7
8
9
35k 4
5 10 PGND PWM Output system ground PWM oscillation pin. Connect a capacitor between this pin and GND.
VR
10 3k
1k
11
IB
Output drive current adjustment pin. Connect a resistor between this pin and GND.
VR
40k
1k 11 Continued on next page.
No.A0665-6/11
LB11681H
Continued from preceding page.
Pin No. 13 Symbol FG Pin Description FG pulse output pin (Open collector output) Provides one Hall effect sensor equivalent FG output) When the FG output is necessary, connect a pullup resistance with this pin. Equivalent Circuit
VR
13
14
VR
Simplified power supply output pin. Connect a capacitor between this pin and GND. This pin is connected with power supply of the small signal system circuit in IC.
VM
10k
14
15
F/R
Pin to switch the rotating mode in spindle motor block. Do not apply a voltage above the voltage of the VR pin. Switch F / R when the motor has stopped.
VR
40k 15 40k
17 LCK Lock protection circuit timing setting pin. Connect a capacitor between this pin and GND. As the capacity increase, the time of lock detection / release setting can be lengthened
VR
1k 17 1k
19
LD
Lock detection output pin (Open collector output) The LD output goes to the high level during lock protection When LD output is necessary, connect a pull-up resistance with this pin
VR
19
Continued on next page.
No.A0665-7/11
LB11681H
Continued from preceding page.
Pin No. 20 Symbol VREF Pin Description The pin as reference voltage of control amplifier Equivalent Circuit
VR
20
10k
21
VCTL
Control amplifier input pin
VR
300 21
22 23,24 25,26 27,28
SGND HW HV HU
Small signal system ground pin Hall input pin
VR
24 26 28
300 300
23 25 27
No.A0665-8/11
185k
LB11681H
Explanation of LB11681H and External Parts
The LB11681H is three-phase brush less fan motor driver IC that can be operated with 12V signal power supply. Since this IC is PWM soft switching drive, it is perfect to operate as high-efficiency motor for a low-noise drive. Also, since this IC incorporates a motor constraint protection function necessary for a fan motor, highly reliable products can be designed. To design the system by using the LB11681H, please develop the system that is obtained sufficient characteristics after reading the following details. 1. Output Drive Circuit The LB11681H is three-phase brush less type fan motor driver. A high-efficiency direct PWM drive method is adopted in this drive. Also, for low-noise drive of motor, 180degrees current-carrying soft switching method is adopted. 2. Hall Amplifier and Bias circuit Since motor driving current depends on the Hall input waveform, the Hall input amplitude should be set to appropriate value. To obtain good driving current, please adjust the bias resistance so that the Hall input amplitude is 100-200mVp-p. When the Hall input amplifier is large, a current-carrying OFF band is made. Connect a Hall bias resistance between the Hall power supply and plus-side of Hall bias. Also, connect the minus-side of the Hall bias with the HB-pin (pin 1) directly. (No bias resistance on the minusSide ). 3. Current Limitation Circuit The LB11681H incorporates the current limitation circuit. The value of control current of the current limitation circuit is determined by I = VRF / Rf. (VRF = 0.21V typical) The current limitation operation, when the voltage of the RF pin (pin 4) exceeds the limiting value, The transistor on the sink-side is turned off. 4. PWM oscillation circuit The PWM frequency of this IC is adjustable by connecting the capacitor between the PWM pin (pin 10) and GND. We recommend the PWM frequency of 50kHz to 100kHz. When the PWM oscillation frequency is too low, the ripple amplitude of the coil current becomes large. Also, when the PWM oscillation frequency is too high, the driving efficiency is reduced. 5. Adjust of the driving current In order to ensure the soft switching, it is necessary to set the driving current value by the best value with inputting a proper the Hall input amplitude. The driving current is set by the IB pin (pin 11). When the value of the IB resistance becomes small, large amounts of the driving current will flow. The constants of reference for the IB resistance and the RF resistance are shown below.
RF limited current 0.64(A) 0.84(A) 1.05(A) 1.26(A) RF resistance 1 3parallel 1 4parallel 1 5parallel 1 6parallel IB constant 8.2(k) 6.8(k) 4.7(k) 3.3(k) Controlled gain 0.66(A/V) 0.88(A/V) 1.10(A/V) 1.32(A/V)
No.A0665-9/11
LB11681H
6. FG output The FG pin (pin 13) of this IC is the Hall input U-phase comparator output. Also, since the FG pin is a open collector output, please connect a pull-up resistance with this pin. (When the FG output is not used, no a pull-up resistance necessary.) 7. F / R pin (Forward / Reverse) The F/R pin (pin 15) is a pin for the motor rotation direction switching. By switching the input level, the direction of rotation of the motor is switchable. In the high input level, Please do not apply beyond the limits of the voltage of the VR pin (pin 14). Also, carry out switching of forward / reverse when the motor has stopped. 8. Motor Lock Detection Protection Circuit The LB11681H incorporates the lock protection circuit to protect the IC and the system from the motor restrained condition. If the rotor of the brush less motor is not rotated by any reason a certain period of time, the voltage of the LCK pin is rising. And, when the voltage reaches the lock detection operation voltage the motor is judged as a restrained condition. Then, the LD pin output (Lock detection output, pin 19) is changed from low to high. The output transistor becomes a intermittent driving mode at a time. Therefore, the system is protected by suppressing the heat generation of IC. The setting of the lock detection time can be adjusted by connecting the capacitance value between the LCK pin (pin 17) and GND. When the rotor have started, the motor is released from restriction. And, when the motor becomes a normal drive from a intermitted drive, the LD output goes to low. When the motor is rotating, the current (discharged current 2) of one-PWM period is discharged every one-pulse of a Hall FG. In addition, since the LD pin is a open-collector output, please connect a pull-up resistance with the LD pin (When the LD pin is not used, no a pull-up resistance ). The relationship between the average time from the lock protection condition to release of the lock protection condition and the capacity of a LCK capacitor (CLCK) are as follows. The average time from the lock condition (Stopped of the motor) to the operation of the lock protection function = (3.8 - *VLCK ) x CLCKF / 4.1A The average time from the operation of the lock protection function to release of the lock protection condition = 2.6 x CLCKF / 2.4A Note : *VLCK is the voltage of the LCK pin. The voltage of the LCK pin changes depending on a rotating speed or the lock protection circuit is nonfunctional. When CLCK is 2.2F, The average time from the lock condition (Stopped of the motor) to the operation of the lock protection function = 2.0s The average time from the operation of the lock protection function to release of the lock protection condition = 2.4s 9. Control Amplifier The driving current of the LB11681H can be controlled by the difference in voltage (the difference in voltage is shown as "CTL" from here.) between the VCTL pin (pin 21) and the VREF pin (pin 20). When CTL increases, the driving current becomes large. Dynamic range of CTL is about 1V, when the voltage of the CTL pin becomes 1V or more, the IC becomes a full-driving state. Also, when "CTL is a positive relationship, the output is turned off.
No.A0665-10/11
LB11681H
10. Usage Note : As for the GND The frames of center of IC are the power system ground. The power GND and the system GND are set to the lowest potential. As for the bypath capacitor The bypath capacitor between the VM pin and GND must connect as close as possible to the GND pin of IC. As for VM, GND and short-circuit between the outputs. Please avoid the following matters. : - Short between the output pin and the VM pin. - Short between the output pin and GND - Short between the outputs. Also, the IC should be oriented on the board because the IC may be destroyed and may be emitted smoke possibly.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No.A0665-11/11


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